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Influence of deposition pressure of CuTe electrode on the tantalum oxide-based resistive switching memory

被引：2
|
作者：
Baek, Gwangho [1 ]
Yang, Seungmo [2 ]
Kim, Taeyoon [2 ]
机构：
[1] Hanyang Univ, Div Nanoscale Semicond Engn, Novel Funct Mat & Device Lab, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Phys, Novel Funct Mat & Devices Lab, Seoul 04763, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2019年 / 215卷
关键词：
Resistive switching; Copper telluride; Conductive bridge memory; Tantalum oxide; NONVOLATILE MEMORY; MECHANISMS; INTERFACE; DEVICES;
D O I：
10.1016/j.mee.2019.110987
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The resistive switching characteristics of Pt/TaOx/CuTe devices were investigated with CuTe bottom electrodes deposited under different working pressure. The CuTe bottom electrode was prepared using a magnetron radio-frequency sputtering. The resistance and distribution of HRS were decreased with increasing deposition pressure of CuTe bottom electrode and then the resistance of LRS was increased however the distribution of LRS was unchanged. The CuTe bottom electrode was systematically analyzed to identify the effect of deposition condition on resistive switching behavior. The intermixing between the TaOx layer and CuTe bottom electrode was clearly identified as an active factor causing the variation of resistive switching parameters.
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页数：5
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