Radiation Testing of Tantalum Oxide-based Resistive Memory

被引：0
|
作者：
Holt, Joshua [1 ,2 ]
Cady, Nathaniel [1 ,2 ]
Yang-Scharlotta, Jean [3 ]
机构：
[1] SUNY Polytech Inst, Coll Nanoscale Sci, Albany, NY 12203 USA
[2] SUNY Polytech Inst, Coll Engn, Albany, NY USA
[3] NASA, Jet Prop Lab, Pasadena, CA USA
来源：
2015 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2015年
关键词：
resistive memory; RRAM; radiation; tantalum oxide; memory; TAOX;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resistive memory (RRAM) is an emerging memory technology, expected to have inherent resistance to radiation damage. We present an initial study characterizing the effects of several types of radiation on a set of tantalum oxide-based RRAM devices. Gamma radiation (64.7 Mrad(Si)) was found to have no significant impact on switching properties. Likewise, ionic radiation (H, N, Ar+) up to 10(15) ions/cm(2) did not have any significant effect. This resistance to radiation, combined with high endurance and data retention, make RRAM an excellent candidate for use in harsh environments.
引用
收藏
页码：155 / 158
页数：4
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