Programmable memory in organic field-effect transistor based on lead phthalocyanine

被引：42
|
作者：
Mukherjee, Biswanath [1 ,2 ]
Mukherjee, Moumita [1 ]
机构：
[1] Konkuk Univ, Dept Chem, Seoul 143701, South Korea
[2] Kalna Coll, Dept Phys, Burdwan 713409, W Bengal, India
来源：
ORGANIC ELECTRONICS | 2009年 / 10卷 / 07期
关键词：
Organic thin film transistors; Polymer; Gate dielectric; Memory; Phthalocyanine; POLYMERIC GATE ELECTRET; COPPER PHTHALOCYANINE; ELEMENT; DIODES;
D O I：
10.1016/j.orgel.2009.07.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A nonvolatile organic field-effect transistor (OFET) with a polymeric electret as gate insulator and spun cast film of lead phthalocyanine (PbPc) as semiconductor channel is reported. Hysteresis induced by gate-bias stress was exploited to study nonvolatile memory effects. The observation of the hysteresis and memory window is proposed to originate from charge storage in the polymeric electret. The on state retention time for the OFET memory device is more than 5 h and the device can reproduce continuous write-read-erase-read switching cycles. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1282 / 1287
页数：6
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