Light programmable/erasable organic field-effect transistor ambipolar memory devices based on the pentacene/PVK active layer

被引：72

作者：

Yi, Mingdong ^{[1
,2
]}

Xie, Ming ^{[1
,2
]}

Shao, Yaqing ^{[1
,2
]}

Li, Wen ^{[1
,2
]}

Ling, Haifeng ^{[1
,2
]}

Xie, Linghai ^{[1
,2
]}

Yang, Tao ^{[1
,2
]}

Fan, Quli ^{[1
,2
]}

Zhu, Jialu ^{[1
,2
]}

Huang, Wei ^{[1
,2
,3
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Organ Elect & Informat Displays, Nanjing 210023, Jiangsu, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, Nanjing 210023, Jiangsu, Peoples R China

[3] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect KLOFE, Nanjing 211816, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 20期

基金：

中国国家自然科学基金;

关键词：

LOW-VOLTAGE; NONVOLATILE MEMORY; THRESHOLD VOLTAGE; GATE DIELECTRICS; SEMICONDUCTOR; ELECTRETS; STORAGE;

D O I：

10.1039/c5tc00680e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrated organic field-effect transistor (OFET) ambipolar memory devices based on unipolar OFETs by utilizing light illumination. The OFET ambipolar memory devices showed stable ambipolar memory properties, and the retention time of both hole-trapping mode and electron-trapping mode could be well maintained for more than 10(4) s with a high ON/OFF current ratio of 10(3) and 10(4), respectively. Moreover, the memory window of the OFET ambipolar memory devices increased to about 70 V, which was twice more than that of the OFET unipolar memory devices. In addition, the memory characteristics of the OFET ambipolar memory devices confirmed that light illumination as well as electrical stress can act as an independent programming/erasing operation method. The results suggested that our research provided an efficient approach to realize the OFET ambipolar memory devices.

引用

页码：5220 / 5225

页数：6

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