Noncoplanar organic field-effect transistor based on copper phthalocyanine

We present a method of fabricating noncoplanar channel organic field-effect transistors (OFETs) by a conventional photolithographic technique. Using this method, OFETs with micrometer critical features in slanting configurations and submicrometer critical features in vertical configurations were fabricated. The critical channel length over 1 mu m was controlled by the patterning technique, while the one of 0.5 mu m was defined by the thickness of an insulating layer between the drain and source electrodes. Also, we demonstrate that the OFETs containing two different metals as source and drain electrodes, respectively, are easily realized. All the OFETs based on copper phthalocyanine exhibit a high performance.