Copper-phthalocyanine field-effect transistor with a low driving voltage

被引：29

作者：

Okuda, T ^{[1
]}

Shintoh, S ^{[1
]}

Terada, N ^{[1
]}

机构：

[1] Kagoshima Univ, Dept nanostruct & Adv Mat, Kagoshima 8900065, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1778815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper-phthalocyanine-thin-film metal-insulator-semiconductor field-effect transistors operating with a low driving voltage have been fabricated by using a PbZr0.5Ti0.5O3 film as a high-permittivity insulator layer (epsilonapproximate to500). A field mobility of about 0.017 cm(2)/Vs and an ON/OFF ratio of more than 10(3) were obtained at a gate voltage of -2 V and a drain-source voltage of -1 V. This p-type copper-phthalocyanine transistor has a driving voltage low enough for practical device applications. (C) 2004 American Institute of Physics.

引用

页码：3586 / 3588

页数：3

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