Precursor forms of cavity solitons in nonlinear semiconductor microresonators

被引：11

作者：

Ganne, I ^{[1
]}

Slekys, G ^{[1
]}

Sagnes, I ^{[1
]}

Kuszelewicz, R ^{[1
]}

机构：

[1] CNRS, UPR 020, Lab Photon Nanostruct, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW E | 2002年 / 66卷 / 06期

关键词：

D O I：

10.1103/PhysRevE.66.066613

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We study the transverse nonlinear dynamics of bulk and multi-quantum well AlGaAs microresonators, in the mixed dispersive and saturable absorptive regime, slightly below the band-gap edge energy. With a Gaussian beam excitation we observe strongly localized states of various shapes, bright or dark in reflection. Their dynamics appears to be ruled by strong thermally induced nonlinear mechanisms, acting as a dressing mechanism for electronic nonlinearities. Precursor forms of cavity solitons are also identified.

引用

页码：066613/1 / 066613/10

页数：10

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