Precursor forms of cavity solitons in nonlinear semiconductor microresonators

被引:11
|
作者
Ganne, I [1 ]
Slekys, G [1 ]
Sagnes, I [1 ]
Kuszelewicz, R [1 ]
机构
[1] CNRS, UPR 020, Lab Photon Nanostruct, F-91460 Marcoussis, France
来源
PHYSICAL REVIEW E | 2002年 / 66卷 / 06期
关键词
D O I
10.1103/PhysRevE.66.066613
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We study the transverse nonlinear dynamics of bulk and multi-quantum well AlGaAs microresonators, in the mixed dispersive and saturable absorptive regime, slightly below the band-gap edge energy. With a Gaussian beam excitation we observe strongly localized states of various shapes, bright or dark in reflection. Their dynamics appears to be ruled by strong thermally induced nonlinear mechanisms, acting as a dressing mechanism for electronic nonlinearities. Precursor forms of cavity solitons are also identified.
引用
收藏
页码:066613/1 / 066613/10
页数:10
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