In-situ spectroscopic ellipsometry of HgCdTe

被引:13
|
作者
Benson, JD
Cornfeld, AB
Martinka, M
Singley, KM
Derzko, Z
Shorten, PJ
Dinan, JH
机构
[1] USA,RES LAB,FT BELVOIR,VA 22060
[2] JA WOOLLAM CO INC,LINCOLN,NE 68508
关键词
molecular beam epitaxy; spectroscopic ellipsometry;
D O I
10.1007/BF02655042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.
引用
收藏
页码:1406 / 1410
页数:5
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