State of the Art Si-based Receiver Solutions for Short Reach Applications

被引：0

作者：

Morse, M. ^{[1
]}

Yin, T. ^{[1
]}

Kang, Y. ^{[1
]}

Dosunmu, O. ^{[1
]}

Liu, H. D. ^{[1
]}

Paniccia, M. ^{[1
]}

Sarid, G. ^{[2
]}

Ginsburg, E. ^{[2
]}

Cohen, R. ^{[2
]}

Saado, Y. ^{[2
]}

Shnaiderman, R. ^{[2
]}

Zadka, M. ^{[2
]}

机构：

[1] Intel Corp, 2200 Mission Coll Blvd, Santa Clara, CA 95054 USA

[2] Numonyx Corp, IL-82109 Qiryat Gat, Israel

来源：

OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the recent progress in Ge/Si receivers which are becoming competitive in performance with their III-V counterparts. In particular, we will focus on pin and avalanche photodetector-based receiver results at 1310 nm. (C)2008 Optical Society of America

引用

页码：1170 / +

页数：2

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