State of the Art Si-based Receiver Solutions for Short Reach Applications

被引:0
|
作者
Morse, M. [1 ]
Yin, T. [1 ]
Kang, Y. [1 ]
Dosunmu, O. [1 ]
Liu, H. D. [1 ]
Paniccia, M. [1 ]
Sarid, G. [2 ]
Ginsburg, E. [2 ]
Cohen, R. [2 ]
Saado, Y. [2 ]
Shnaiderman, R. [2 ]
Zadka, M. [2 ]
机构
[1] Intel Corp, 2200 Mission Coll Blvd, Santa Clara, CA 95054 USA
[2] Numonyx Corp, IL-82109 Qiryat Gat, Israel
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the recent progress in Ge/Si receivers which are becoming competitive in performance with their III-V counterparts. In particular, we will focus on pin and avalanche photodetector-based receiver results at 1310 nm. (C)2008 Optical Society of America
引用
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页码:1170 / +
页数:2
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