Low temperature wafer bonding with gas cluster ion beams

被引：0
|
作者：
Toyoda, Noriaki [1 ]
Ikeda, Shota [1 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan
来源：
PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2019年
关键词：
D O I：
10.23919/ltb-3d.2019.8735342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low temperature bodings of Cu with the gas cluster ion beam (GCIB) irradiations were studied. Since GCIB exhibits surface smoothing effects without severe damage, it is promising for the surface activated bonding (SAB). Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films without roughening. With increasing the acceleration voltage of Ar-GCIB, the surface roughness of Cu decreased, which resulted in lowering the bonding temperature.
引用
收藏
页码：83 / 83
页数：1
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