1200 nm highly strained GaInAs/GaAs surface emitting lasers

被引：0
|
作者：
Koyama, F [1 ]
Miyamoto, T [1 ]
Arai, M [1 ]
Kondo, T [1 ]
机构：
[1] Tokyo Inst Technol, P&I Lab, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2002年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：271 / 272
页数：2
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