Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

被引：42
|
作者：
Nishiyama, N [1 ]
Arai, M [1 ]
Shinada, S [1 ]
Azuchi, M [1 ]
Miyamoto, T [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期
关键词：
GaAs (311)B substrates; GaInAs; quantum wells; surface emitting lasers;
D O I：
10.1109/2944.954136
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 mum emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 mum on GaAs (311)B substrate for the first time. The 1.15-mum edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm(2). The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 mum, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170 degreesC without a heat sink was achieved.
引用
收藏
页码：242 / 248
页数：7
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