Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs

被引：67
|
作者：
McIntosh, KA
Nichols, KB
Verghese, S
Brown, ER
机构：
[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington
[2] Sanders, Lockheed-Martin, Nashua
[3] Def. Adv. Research Projects Agency, Arlington
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 03期
关键词：
D O I：
10.1063/1.118412
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photocarrier relaxation times tau(r) in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured tau(r) values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 degrees C and annealed at temperatures below 580 degrees C. We report the results of a systematic investigation of the dependence of tau(r) on growth temperatures between 180 and 260 degrees C and anneal temperatures between 480 and 620 degrees C. (C) 1997 American Institute of Physics.
引用
收藏
页码：354 / 356
页数：3
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