Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

被引：79
|
作者：
Karthik, C. [1 ]
Varma, K. B. R. [1 ]
机构：
[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2006年 / 67卷 / 12期
关键词：
ceramics; oxides; dielectric properties;
D O I：
10.1016/j.jpcs.2006.06.012
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The complex dielectric and AC conductivity response of BaBi2Nb2O9 relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the 'universal relaxation law'. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law sigma(omega) = sigma(0) + A omega(n). The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of it followed the Vogel-Fulcher relation with activation energy of about 0.14eV. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2437 / 2441
页数：5
相关论文
共 50 条
  • [41] Polarization processes in BaBi2Nb2O9 and SrBi2Ta2O9 ceramics in infralow-frequency fields
    A. I. Burkhanov
    Yu. V. Kochergin
    K. Bormanis
    A. Kalvane
    Bulletin of the Russian Academy of Sciences: Physics, 2010, 74 (9) : 1264 - 1266
  • [42] Preparation of nanocrystalline ferroelectric BaBi2Nb2O9 by citrate gel method
    Gaikwad, SP
    Samuel, V
    Pasricha, R
    Ravi, V
    MATERIALS LETTERS, 2004, 58 (29) : 3729 - 3731
  • [43] Structural and Dielectric Properties of BaBi2Nb2O9 Ferroelectric Ceramic Powders by a Solid State Reaction Method
    Ramaraghavulu, R.
    Buddhudu, S.
    FERROELECTRICS, 2014, 460 (01) : 57 - 67
  • [44] AC conductivity and dielectric relaxation of ion doped ferroelectric SrBi2Nb2O9 ceramics
    Kim, JS
    Song, TK
    Kim, MH
    Kim, SS
    FERROELECTRICS, 2002, 268 : 345 - 350
  • [45] Low Frequency Nonlinearity in Layered Ferroelectrics BaBi2Nb2O9 and SrBi2Ta2O9
    Bormanis, K.
    Kalvane, A.
    Burkhanov, A. I.
    Kochergin, Y. V.
    PROCEEDINGS OF THE 2010 IEEE INTERNATIONAL CONFERENCE ON SOLID DIELECTRICS (ICSD 2010), 2010,
  • [46] Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films
    Mazon, T.
    Zaghete, M. A.
    Cilense, M.
    Varela, J. A.
    CERAMICS INTERNATIONAL, 2009, 35 (08) : 3143 - 3146
  • [47] Effect of Cu2+ substitution on the relaxor behavior of BaBi2Nb2O9 ferroelectric nanoceramics prepared by chemical route
    Adak, Mrinal K.
    Mukherjee, Arnab
    Chowdhury, Anirban
    Khatun, Julekha
    Dhak, Prasanta
    Dhak, Debasis
    MATERIALS RESEARCH EXPRESS, 2019, 6 (02):
  • [48] Zirconia assisted crystallization of ferroelectric BaBi2Nb2O9 based glass-ceramics: Kinetics, optical and dielectrical properties
    Chakrabarti, Anirban
    Molla, Atiar Rahaman
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 844
  • [49] Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films
    Laha, A
    Krupanidhi, SB
    APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3818 - 3820
  • [50] Characterisation of BaBi2Nb2O9 powders and thin films prepared by a solution synthesis technique
    Bencan, A
    Boullay, P
    Mercurio, JP
    SOLID STATE SCIENCES, 2004, 6 (06) : 547 - 551
12345