Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

被引:79
|
作者
Karthik, C. [1 ]
Varma, K. B. R. [1 ]
机构
[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
关键词
ceramics; oxides; dielectric properties;
D O I
10.1016/j.jpcs.2006.06.012
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The complex dielectric and AC conductivity response of BaBi2Nb2O9 relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the 'universal relaxation law'. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law sigma(omega) = sigma(0) + A omega(n). The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of it followed the Vogel-Fulcher relation with activation energy of about 0.14eV. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2437 / 2441
页数:5
相关论文
共 50 条
  • [31] Influence of post-sintering annealing on relaxor properties of BaBi2Nb2O9 ceramics
    Adamczyk, M.
    Zawada, A.
    Pilch, M.
    Kozielski, L.
    PHASE TRANSITIONS, 2013, 86 (2-3) : 175 - 181
  • [32] Preparation and characterization of BaBi2Nb2O9(BBN) ceramics synthetized by polymeric precursors method
    Campos, AL
    Mazon, T
    Varela, JA
    Zaghete, MA
    Cilense, M
    ADVANCED POWDER TECHNOLOGY II, 2001, 189-1 : 149 - 154
  • [33] BaBi2Nb2O9 powder and their ceramics prepared by aqueous solution-gel method
    Liu, Weihong
    Wang, Hong
    Zhang, Bo
    Li, Yongfeng
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2012, 64 (03) : 673 - 677
  • [34] Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi2Nb2O9 ceramics prepared by spark plasma sintering
    Yan, Haixue
    Zhang, Hongtao
    Ubic, Rick
    Reece, Mike
    Liu, Jing
    Shen, Zhijian
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2006, 17 (09) : 657 - 661
  • [35] Dielectric properties of pulsed excimer laser ablated BaBi2Nb2O9 thin films
    Laha, A
    Krupanidhi, SB
    Saha, S
    FERROELECTRIC THIN FILMS XI, 2003, 748 : 435 - 440
  • [36] Low-temperature fabrication of BaBi2Nb2O9 ceramics by reaction controlled sintering
    Tatsuhiro Shigyo
    Hidenobu Itoh
    Junichi Takahashi
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 302 - 308
  • [37] Preparation and characterization of BaBi2Nb2O9(BBN) ceramics synthetized by polymeric precursors method
    Campos, A.L.
    Mazon, T.
    Varela, J.A.
    Zaghete, M.A.
    Cilense, M.
    Key Engineering Materials, 2001, 189-191 : 149 - 154
  • [38] Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi2Nb2O9 ceramics prepared by spark plasma sintering
    Haixue Yan
    Hongtao Zhang
    Rick Ubic
    Mike Reece
    Jing Liu
    Zhijian Shen
    Journal of Materials Science: Materials in Electronics, 2006, 17 : 657 - 661
  • [39] Structural and dielectric properties of BaBi2Nb 2O9 ceramics
    20142717882588
    (1) Department of Physics, Sri Venkateswara University, Tirupati-517502, India, 1600, Board of Research in Nuclear Sciences; Department of Atomic Energy; Government of India (American Institute of Physics Inc.):
  • [40] The Nature of Dielectric Nonlinearity in the Region of Diffused Phase Transition in Layered Ferroelectric BaBi2Nb2O9
    Bormanis, K.
    Burkhanov, A. I.
    Kochergin, Yu. V.
    Nesterov, V. N.
    Kalvane, A.
    Antonova, M.
    Sternberg, A.
    FERROELECTRICS, 2008, 369 : 85 - 90