Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution

被引：8

作者：

Bondarenko, V. B. ^{[1
]}

Davydov, S. N. ^{[1
]}

Filimonov, A. V. ^{[1
]}

机构：

[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 01期

关键词：

DOPED SEMICONDUCTOR; NONUNIFORMITIES;

D O I：

10.1134/S1063782610010069

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The inherent inhomogeneity of potential on the doped-semiconductor surface during the formation of equilibrium diffusion distribution for an electroactive impurity in the space-charge layers is discussed. The characteristic random-potential values are determined in the case of nondegenerate surface electron gas. The dependence of these inhomogeneities on the surface and bulk parameters is shown.

引用

页码：41 / 44

页数：4

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