Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution

被引：8
|
作者：
Bondarenko, V. B. [1 ]
Davydov, S. N. [1 ]
Filimonov, A. V. [1 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 01期
关键词：
DOPED SEMICONDUCTOR; NONUNIFORMITIES;
D O I：
10.1134/S1063782610010069
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The inherent inhomogeneity of potential on the doped-semiconductor surface during the formation of equilibrium diffusion distribution for an electroactive impurity in the space-charge layers is discussed. The characteristic random-potential values are determined in the case of nondegenerate surface electron gas. The dependence of these inhomogeneities on the surface and bulk parameters is shown.
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页码：41 / 44
页数：4
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