An InGaP/GaAs HBT transimpedance amplifier with cascode structure for 10bps optical communication

被引：0
|
作者：
Yuan, ZP [1 ]
Sun, HF [1 ]
Chenxi, E [1 ]
Liu, XY [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
PROCEEDINGS OF THE 2004 CHINA-JAPAN JOINT MEETING ON MICROWAVES | 2004年
关键词：
TIA; HBT; cascode; InGaP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A transimpedance amplifier based on InGaP/GaAs HBTs have been developed and realized. It is applicable for bit rates of 10Gbps. The cascode structure is applied for its high gain and bandwidth. The chip size of fabricated transimpedance amplifier is 1.5 x 1.5mm(2). The measurement result showed transimpedance gain of 41 dB Omega and a -3 dB bandwidth of 6.7GHz. The output reflection coefficient is better than -9 dB over the bandwidth of operation.
引用
收藏
页码：151 / 154
页数：4
相关论文
共 50 条
  • [1] An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication
    Jung, DY
    Park, SH
    Lee, KH
    Chang, WJ
    Nam, ES
    Lim, JW
    Park, CS
    [J]. 2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, : 974 - 977
  • [2] A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier
    Yang, SC
    Kuo, CW
    Chien, FT
    Chan, YJ
    [J]. 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 204 - 207
  • [3] InGaP/GaAs HBT Broadband Power Amplifier IC with 54.3% Fractional Bandwidth Based on Cascode Structure
    Lee, Wooseok
    Kang, Hyunuk
    Lee, Hwiseob
    Lim, Wonseob
    Bae, Jongseok
    Koo, Hyungmo
    Yoon, Jangsup
    Yang, Youngoo
    [J]. 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1299 - 1302
  • [4] InGaP/GaAs HBT power amplifier with CMRC structure
    Poek, CK
    Yan, BP
    Yang, ES
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 46 (01) : 84 - 88
  • [5] Power and linearity performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications
    Boglione, L
    [J]. 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 2217 - 2220
  • [6] Broadband InGaP/GaAs HBT Power Amplifier Integrated Circuit Using Cascode Structure and Optimized Shunt Inductor
    Lee, Wooseok
    Kang, Hyunuk
    Leee, Hwiseob
    Lim, Wonseob
    Bae, Jongseok
    Koo, Hyungmo
    Yoon, Jangsup
    Hwang, Keum Cheol
    Lee, Kang-Yoon
    Yang, Youngoo
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (12) : 5090 - 5100
  • [7] A Cascode VCO based on Enhanced Colpitts Structure in InGaP/GaAs HBT Technology
    Na, Ho-San
    Shrestha, Bhanu
    Qian, Cheng
    Kim, Nam-Young
    [J]. 2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2007, : 2246 - 2249
  • [8] A 10-GHz Inductorless Modified Regulated Cascode Transimpedance Amplifier for Optical Fiber Communication
    Parapari, Elmira Semsar
    Koozehkanani, Ziaddin Daie
    Toofan, Siroos
    [J]. MICROELECTRONICS JOURNAL, 2021, 114
  • [9] Broadband Linearization of InGaP/GaAs HBT Power Amplifier
    Koh, Minghao
    Ellis, Grant A.
    Teoh, Chin Soon
    [J]. 40TH EUROPEAN MICROWAVE CONFERENCE, 2010, : 878 - 881
  • [10] Design of InGaP/GaAs HBT microwave power amplifier
    Qian, Yongxue
    Liu, Xunchun
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2003, 24 (07): : 753 - 757
12345