An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication

被引：2
|
作者：
Jung, DY [1 ]
Park, SH [1 ]
Lee, KH [1 ]
Chang, WJ [1 ]
Nam, ES [1 ]
Lim, JW [1 ]
Park, CS [1 ]
机构：
[1] Informat & Commun Univ, Sch Engn, Yuseong Gu, Taejon 305732, South Korea
来源：
2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2002年
关键词：
transimpedance amplifier; transimpedance gain; bandwidth; input equivalent noise current density;
D O I：
10.1109/ICMMT.2002.1187866
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transimpedance amplifier (TIA) for 10. Gbps applications has been fabricated with InGaP/GaAs heterojunction bipolar transistors (HBTs). From the input-referred equivalent. noise current density, the sensitivity was calculated. Eye diagram showed wide opened eye : when the input current was 58.6 mu Ap-p the output voltage was 33mVp-p and rising/falling times were the 35 psec. The. chip size of fabricated transinipedance amplifier was 0.7 x 0.8 mm(2). The measurement result showed transimpedance gain of 50 dB 9 and a -3dB bandwidth of 8.2 GHz. The differences between simulation and. measurement were analyzed with chip layout considerations.
引用
收藏
页码：974 / 977
页数：4
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