An InGaP/GaAs HBT transimpedance amplifier with cascode structure for 10bps optical communication

被引：0
|
作者：
Yuan, ZP [1 ]
Sun, HF [1 ]
Chenxi, E [1 ]
Liu, XY [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
PROCEEDINGS OF THE 2004 CHINA-JAPAN JOINT MEETING ON MICROWAVES | 2004年
关键词：
TIA; HBT; cascode; InGaP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A transimpedance amplifier based on InGaP/GaAs HBTs have been developed and realized. It is applicable for bit rates of 10Gbps. The cascode structure is applied for its high gain and bandwidth. The chip size of fabricated transimpedance amplifier is 1.5 x 1.5mm(2). The measurement result showed transimpedance gain of 41 dB Omega and a -3 dB bandwidth of 6.7GHz. The output reflection coefficient is better than -9 dB over the bandwidth of operation.
引用
收藏
页码：151 / 154
页数：4
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