Hot carrier effects in InGaZnO thin-film transistor

被引：25

作者：

Takahashi, Takanori ^{[1
]}

Miyanaga, Ryoko ^{[1
]}

Fujii, Mami N. ^{[1
]}

Tanaka, Jun ^{[2
]}

Takechi, Kazushige ^{[2
]}

Tanabe, Hiroshi ^{[2
]}

Bermundo, Juan Paolo ^{[1
]}

Ishikawa, Yasuaki ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, 8916-5 Takayama, Nara 6300192, Japan

[2] Tianma Japan Ltd, Saiwai Ku, 1-1-2 Kashimada, Kawasaki, Kanagawa 2120058, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 09期

关键词：

PHOTON-EMISSION; DEGRADATION BEHAVIOR; LIGHT ILLUMINATION; ELECTRON; RELIABILITY; GATE;

D O I：

10.7567/1882-0786/ab3c43

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photon emission and the electrical characteristics of a InGaZnO (IGZO) thin-film transistor (TFT) were evaluated to clarify the existence of hot carriers and their effects. The photon emission was observed from the drain edge of the IGZO-TFT and the capacitance-voltage characteristics indicated that a potential barrier was formed at the drain region when the device is driven by high drain voltage of 30 V. Based on these results, the photon emission phenomenon from the IGZO-TFT was induced by hot carriers that should be considered as a significant degradation mode for a high-performance oxide semiconductor device. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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