Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

被引：11

作者：

Lin, Dong ^{[1
]}

Su, Wan-Ching ^{[2
]}

Chang, Ting-Chang ^{[3
,4
]}

Chen, Hong-Chih ^{[5
]}

Tu, Yu-Fa ^{[6
]}

Yang, Jianwen ^{[7
]}

Zhou, Kuan-Ju ^{[8
]}

Hung, Yang-Hao ^{[8
]}

Lu, I-Nien ^{[9
]}

Tsai, Tsung-Ming ^{[2
]}

Zhang, Qun ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Natl Engn Lab TFT LCD Matol & Techn, Shanghai 200433, Peoples R China

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 804, Taiwan

[5] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

[6] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[7] Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China

[8] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[9] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Electrodes; Thin film transistors; Logic gates; Degradation; Hot carriers; Stability analysis; Stress; Amorphous InGaZnO (a-IGZO); hot-carrier stress (HCS); redundant electrode width; DEGRADATION BEHAVIOR; PERFORMANCE; TFTS;

D O I：

10.1109/TED.2020.2990135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, the effects of redundant electrode width on stability of inverted staggered via-contact structured amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) under hot-carrier stress (HCS) were investigated. It is found that devices with a larger redundant electrode width have a severer degradation behavior after HCS. Capacitance-voltage measurements were conducted to study the degradation mechanism and technology computer-aided design (TCAD) simulation was employed to understand the different degradation behaviors.

引用

页码：2372 / 2375

页数：4

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