Substrate doping effects on Raman spectrum of epitaxial graphene on SiC

被引:38
|
作者
Yang, R. [1 ]
Huang, Q. S. [1 ]
Chen, X. L. [1 ]
Zhang, G. Y. [1 ]
Gao, H. -J. [1 ]
机构
[1] Chinese Acad Sci, Nanoscale Phys & Device Lab, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
adsorption; carrier density; charge exchange; doping profiles; electrochemistry; epitaxial layers; graphene; Raman spectra; silicon compounds; wide band gap semiconductors; GRAPHITE; SPECTROSCOPY; DISORDER;
D O I
10.1063/1.3283922
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we reported a Raman scattering study of epitaxial graphene on different doped 6H-SiC (0001) substrates and investigated the substrate induced charge-transfer doping to the epitaxial graphene. We found that the charge carrier type and concentration of epitaxial graphene can be altered by SiC substrates with different doping level and doping type. This effect is comparable to that obtained by electrochemical doping. As Raman scattering is very sensitive to the doping level, the charge carrier concentration of epitaxial graphene can be estimated by the Raman G-peak shift. Our results are fundamental and may have implications for future epitaxial-graphene-based micro/nanoelectronic devices.
引用
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页数:5
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