On the Possibilities of Implementing a Stochastic Model for the Distribution of Nonequilibrium Minority Charge Carriers in a Semiconductor Material

被引：2
|
作者：
Seregina, E. V. [1 ]
Makarenkov, A. M. [1 ]
Stepovich, M. A. [2 ]
机构：
[1] Moscow State Tech Univ, Kaluga Branch, Kaluga 248600, Russia
[2] Tsiolkovskii Kaluga State Pedag Univ, Kaluga 248023, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION | 2009年 / 3卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
ELECTRON-BEAM;
D O I：
10.1134/S1027451009050255
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Some possibilities of implementing a procedure for estimating statistical characteristics (expectation and autocorrelation function) of the distribution of minority charge carriers (MCCs) generated in a homogeneous semiconductor material are studied. The developed procedure is based on the projection method and the matrix operator technique. It is assumed that the electrophysical parameters of the material (lifetime, diffusion coefficient, and surface recombination rate of MCCs) are random quantities (variables) and obey the Gaussian distribution law. The effect of the variance of these quantities on the depth distribution of MCCs is considered. Some possibilities of this method are illustrated for the case of MCC excitation by a broad beam of electrons with moderate energies.
引用
收藏
页码：809 / 819
页数：11
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