Matrix method for solving problem of minority charge carriers generated by electron beam in semiconductor

被引:0
|
作者
Petrov, VI [1 ]
Samokhvalov, AA
Stepovich, MA
Tchaikovsky, AM
机构
[1] Moscow MV Lomonosov State Univ, Moscow, Russia
[2] NE Bauman Tech Univ, Kaluga, Russia
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1310 / 1316
页数:7
相关论文
共 50 条
  • [1] Matrix method for solving problem of minority charge carriers generated by electron beam in semiconductor
    Petrov, V.I.
    Samokhvalov, A.A.
    Stepovich, M.A.
    Chajkovskij, M.M.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66 (09): : 1310 - 1317
  • [2] The spectral method of calculation of distribution of minority charge carriers generated by electron beam in semiconductor
    Belov, AA
    Petrov, VI
    Stepovich, MA
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2000, 64 (08): : 1646 - 1654
  • [3] The orthogonal-projection method for solving equations of diffusion of minority charge carriers generated by the electron beam in semiconductors
    Belov, AA
    Egupov, ND
    Samokhvalov, AA
    Stepovich, MA
    Tchaikovsky, MM
    FIFTH SEMINAR ON PROBLEMS OF THEORETICAL AND APPLIED ELECTRON AND ION OPTICS, 2003, 5025 : 149 - 159
  • [4] On some problems of modeling the distributions of minority charge carriers generated by an electron beam in a semiconductor material
    Seregina E.V.
    Stepovich M.A.
    Makarenkov A.M.
    Filippov M.N.
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, 10 (2) : 445 - 449
  • [5] Model of independent sources used in calculation of minority charge carriers generated by electron beam in semiconductor
    Belov, AA
    Petrov, VI
    Stepovich, MA
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (09): : 1317 - 1322
  • [6] On a modified projection scheme of the least-squares method for the modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material
    Seregina E.V.
    Stepovich M.A.
    Makarenkov A.M.
    Seregina, E. V. (evfs@yandex.ru), 2013, Izdatel'stvo Nauka (07): : 1077 - 1080
  • [7] The model of independent sources using for calculation of distribution of minority charge carriers, generated in two-layer semiconductor by electron beam
    Stepovich, MA
    KhokhLov, AG
    Snopova, MG
    SIXTH SEMINAR ON PROBLEMS OF THEORETICAL AND APPLIED ELECTRON AND ION OPTICS, 2004, 5398 : 159 - 165
  • [8] On the possibility of using the Galerkin projection method to model the spatial distribution of minority charge carriers generated by an electron probe in a semiconductor
    Seregina E.V.
    Stepovich M.A.
    Makarenkov A.M.
    Filippov M.N.
    Journal of Surface Investigation, 2017, 11 (05): : 981 - 986
  • [9] On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures
    Seregina, E. V.
    Kalmanovich, V. V.
    Stepovich, M. A.
    JOURNAL OF SURFACE INVESTIGATION, 2020, 14 (04): : 713 - 717
  • [10] On Modeling the Distributions of Minority Charge Carriers Generated by a Wide Electronic Beam in Planar Multilayer Semiconductor Structures
    E. V. Seregina
    V. V. Kalmanovich
    M. A. Stepovich
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, 14 : 713 - 717