Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

被引：61
|
作者：
Hong, M
Anselm, KA
Kwo, J
Ng, HM
Baillargeon, JN
Kortan, AR
Mannaerts, JP
Cho, AY
Lee, CM
Chyi, JI
Lay, TS
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Natl Cent Univ, Dept EE, Chungli 32054, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.591402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor diodes, with an interfacial density of states less than 10(11) cm(-2) eV(-1) The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 degrees C, as studied from x-ray reflectivity measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01203-8].
引用
收藏
页码：1453 / 1456
页数：4
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