Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

被引：61
|
作者：
Hong, M
Anselm, KA
Kwo, J
Ng, HM
Baillargeon, JN
Kortan, AR
Mannaerts, JP
Cho, AY
Lee, CM
Chyi, JI
Lay, TS
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Natl Cent Univ, Dept EE, Chungli 32054, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.591402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor diodes, with an interfacial density of states less than 10(11) cm(-2) eV(-1) The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 degrees C, as studied from x-ray reflectivity measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01203-8].
引用
收藏
页码：1453 / 1456
页数：4
相关论文
共 50 条
  • [21] Characteristics of Ga2O3(Gd2O3)/GaAs interface:: Structures and compositions
    Hong, M
    Kortan, AR
    Kwo, J
    Mannaerts, JP
    Krajewski, JJ
    Lu, ZH
    Hsieh, KC
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1688 - 1691
  • [22] Ga2O3(Gd2O3) as a gate dielectric for GaAs MOSFETs (invited)
    Hong, M
    Kwo, J
    Liu, CT
    Marcus, MA
    Lay, TS
    Ren, F
    Mannaerts, JP
    Ng, KK
    Chen, YK
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 434 - 442
  • [23] Energy band offsets at a Ga2O3(Gd2O3)-GaAs interface
    Lay, TS
    Hong, M
    Kwo, J
    Mannaerts, JP
    Hung, WH
    Huang, DJ
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 131 - 135
  • [24] III-V compound semiconductor MOSFETs using Ga2O3(Gd2O3) as gate dielectric
    Ren, F
    Hong, M
    Kuo, JM
    Hobson, WS
    Lothian, JR
    Tsai, HS
    Lin, J
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Chen, YK
    Cho, AY
    GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997, 1997, : 18 - 21
  • [25] High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer
    Meng, Ruilin
    Ji, Xiaoli
    Lou, Zheng
    Yang, Jiankun
    Zhang, Yonghui
    Zhang, Zihui
    Bi, Wengang
    Wang, Junxi
    Wei, Tongbo
    OPTICS LETTERS, 2019, 44 (09) : 2197 - 2200
  • [26] Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide
    Hong, M
    Ren, F
    Kuo, JM
    Hobson, WS
    Kwo, J
    Mannaerts, JP
    Lothian, JR
    Chen, YK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1398 - 1400
  • [27] Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
    Chu, L. K.
    Lin, T. D.
    Huang, M. L.
    Chu, R. L.
    Chang, C. C.
    Kwo, J.
    Hong, M.
    APPLIED PHYSICS LETTERS, 2009, 94 (20)
  • [28] Ga2O3 and GaN semiconductor hollow spheres
    Sun, XM
    Li, YD
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2004, 43 (29) : 3827 - 3831
  • [29] 1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors
    Shiu, K. H.
    Chiang, T. H.
    Chang, P.
    Tung, L. T.
    Hong, M.
    Kwo, J.
    Tsai, W.
    APPLIED PHYSICS LETTERS, 2008, 92 (17)
  • [30] GaAs MOSFET's using Ga2O3(Gd2O3) as gate dielectric
    Hong, Minghwei
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 685 - 688
12345