Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

被引：61
|
作者：
Hong, M
Anselm, KA
Kwo, J
Ng, HM
Baillargeon, JN
Kortan, AR
Mannaerts, JP
Cho, AY
Lee, CM
Chyi, JI
Lay, TS
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Natl Cent Univ, Dept EE, Chungli 32054, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.591402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor diodes, with an interfacial density of states less than 10(11) cm(-2) eV(-1) The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 degrees C, as studied from x-ray reflectivity measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01203-8].
引用
收藏
页码：1453 / 1456
页数：4
相关论文
共 50 条
  • [1] Vertical β-Ga2O3 metal-insulator-semiconductor diodes with an ultrathin boron nitride interlayer
    Xu, Mingfei
    Biswas, Abhijit
    Li, Tao
    He, Ziyi
    Luo, Shisong
    Mei, Zhaobo
    Zhou, Jingan
    Chang, Cheng
    Puthirath, Anand B.
    Vajtai, Robert
    Ajayan, Pulickel M.
    Zhao, Yuji
    APPLIED PHYSICS LETTERS, 2023, 123 (23)
  • [2] Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
    Ren, F
    Abernathy, CR
    MacKenzie, JD
    Gila, BP
    Pearton, SJ
    Hong, M
    Marcus, MA
    Schurman, MJ
    Baca, AG
    Shul, RJ
    SOLID-STATE ELECTRONICS, 1998, 42 (12) : 2177 - 2181
  • [3] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
    Winfried Mönch
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 1444 - 1448
  • [4] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
    Moench, Winfried
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (02) : 1444 - 1448
  • [5] Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications
    Lay, TS
    Hong, M
    Mannaerts, JP
    Liu, CT
    Kwo, J
    Ren, F
    Marcus, MA
    Ng, KK
    Chen, YK
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 78 - 84
  • [6] MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN
    Chang, Y. C.
    Lee, Y. J.
    Chiu, Y. N.
    Lin, T. D.
    Wu, S. Y.
    Chiu, H. C.
    Kwo, J.
    Wang, Y. H.
    Hong, M.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 390 - 393
  • [7] Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
    Ren, F
    Hong, M
    Chu, SNG
    Marcus, MA
    Schurman, MJ
    Baca, A
    Pearton, SJ
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3893 - 3895
  • [8] Structural properties of Ga2O3(Gd2O3)-GaAs interfaces
    Hong, M
    Marcus, MA
    Kwo, J
    Mannaerts, JP
    Sergent, AM
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1395 - 1397
  • [9] Sulfur passivation of Ga2O3(Gd2O3)/GaAs metal-oxide-semiconductor structures
    Eftekhari, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2569 - 2572
  • [10] Investigation of a Metal-Insulator-Semiconductor Pt/Mixed Al2O3 and Ga2O3 Insulator/AlGaN Hydrogen Sensor
    Lee, Ching-Ting
    Yan, Jheng-Tai
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (08) : J281 - J284
12345