Properties of a-Se for use in flat panel X-ray image detectors

被引：27
|
作者：
Kasap, SO
Haugen, C
Nesdoly, M
Rowlands, JA
机构：
[1] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada
[2] Univ Toronto, Sunnybrook Hlth Sci Ctr, Dept Med Biophys, Toronto, ON M4N 3N5, Canada
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷
关键词：
D O I：
10.1016/S0022-3093(99)00954-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The present paper examines why a-Se has become the key photoconductor material in flat panel direct conversion X-ray image detectors. We critically examine the X-ray sensitivity of stabilized a-Se layers as a function of electric field and mean photon energy. The radiation energy W+/- absorbed per free electron-hole pair liberated for photoconduction in both a-Se and a-Si:H seem to follow the Que-Rowlands rule of W+/- approximate to 2.2 E-g + E-phonon for amorphous semiconductors. (C) 2000 Elsevier Science B.V. All rights reserved.
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页码：1163 / 1167
页数：5
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