A Ka-band high power frequency doubler in SMT package

被引：0
|
作者：
Nam, Sang-Min [1 ]
Traut, Frank [1 ]
Cuggino, Joe [1 ]
机构：
[1] Hittite Microwave Corp, Chelmsford, MA 01824 USA
来源：
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006 | 2006年
关键词：
GaAs p-HEMT; frequency doubler; Ka-band VSAT; QFN package;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the development of a packaged Ka-band high power frequency doubler. The frequency doubler MMIC is developed using 0.15um GaAs p-HEMT technology and packaged into a low cost QFN package for SMT application. This packaged frequency doubler delivers above +22dBm saturated output power of the 2(nd) harmonic signal with greater than 60dBc rejection of the fundamental and 3(rd) harmonic signal across the 28 to 30GHz band.
引用
收藏
页码：61 / 64
页数：4
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