A Ka-band high power frequency doubler in SMT package

被引：0

作者：

Nam, Sang-Min ^{[1
]}

Traut, Frank ^{[1
]}

Cuggino, Joe ^{[1
]}

机构：

[1] Hittite Microwave Corp, Chelmsford, MA 01824 USA

来源：

IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006 | 2006年

关键词：

GaAs p-HEMT; frequency doubler; Ka-band VSAT; QFN package;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the development of a packaged Ka-band high power frequency doubler. The frequency doubler MMIC is developed using 0.15um GaAs p-HEMT technology and packaged into a low cost QFN package for SMT application. This packaged frequency doubler delivers above +22dBm saturated output power of the 2(nd) harmonic signal with greater than 60dBc rejection of the fundamental and 3(rd) harmonic signal across the 28 to 30GHz band.

引用

页码：61 / 64

页数：4

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