Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films

被引：0

作者：

Mart, C. ^{[1
]}

Viegas, A. ^{[1
]}

Esslinger, S. ^{[1
]}

Czernohorsky, M. ^{[1
]}

Weinreich, W. ^{[1
]}

Mutschall, D. ^{[2
]}

Kaiser, A. ^{[2
]}

Neumann, N. ^{[2
]}

Grossmann, T. ^{[3
]}

Hiller, K. ^{[3
]}

Eng, L. M. ^{[4
]}

机构：

[1] Fraunhofer Inst Photon Microsyst IPMS, IoT Components & Syst, Dresden, Germany

[2] Infratec GmbH, Infrarotsensor, Dresden, Germany

[3] Tech Univ Chemnitz, Ctr Microtechnol, Chemnitz, Germany

[4] Tech Univ Dresden, Inst Appl Phys, Dresden, Germany

来源：

2020 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (IFCS-ISAF) | 2020年

关键词：

pyroelectric; hafnium oxide; infrared; sensor; ferroelectric; plasmonic; SINUSOIDAL TEMPERATURE WAVES; NONPYROELECTRIC CURRENTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanometer-thin ferroelectric hafnium oxide (HfO2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf0.5Zr0.5O2 mixed oxide.

引用

页数：3

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