Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films

被引：0
|
作者：
Mart, C. [1 ]
Viegas, A. [1 ]
Esslinger, S. [1 ]
Czernohorsky, M. [1 ]
Weinreich, W. [1 ]
Mutschall, D. [2 ]
Kaiser, A. [2 ]
Neumann, N. [2 ]
Grossmann, T. [3 ]
Hiller, K. [3 ]
Eng, L. M. [4 ]
机构：
[1] Fraunhofer Inst Photon Microsyst IPMS, IoT Components & Syst, Dresden, Germany
[2] Infratec GmbH, Infrarotsensor, Dresden, Germany
[3] Tech Univ Chemnitz, Ctr Microtechnol, Chemnitz, Germany
[4] Tech Univ Dresden, Inst Appl Phys, Dresden, Germany
来源：
2020 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (IFCS-ISAF) | 2020年
关键词：
pyroelectric; hafnium oxide; infrared; sensor; ferroelectric; plasmonic; SINUSOIDAL TEMPERATURE WAVES; NONPYROELECTRIC CURRENTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanometer-thin ferroelectric hafnium oxide (HfO2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf0.5Zr0.5O2 mixed oxide.
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页数：3
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