Implementing Time Resolved Laser Assisted Device Alteration using Pulse on demand nanosecond Laser Diode

被引：0

作者：

Ravikumar, V. K. ^{[1
,2
]}

Ranganathan, G. ^{[1
]}

Phoa, S. L. ^{[1
]}

Chin, J. M. ^{[1
]}

Pey, K. L. ^{[2
]}

Yang, J. K. W. ^{[2
]}

Kok, W. L. ^{[3
]}

Koh, L. S. ^{[4
]}

机构：

[1] Adv Micro Devices Inc, Singapore, Singapore

[2] Singapore Univ Technol & Design, Singapore, Singapore

[3] Einst Technol Pte Ltd, Singapore, Singapore

[4] Semicaps Pte Ltd, Singapore, Singapore

来源：

ISTFA 2016: CONFERENCE PROCEEDINGS FROM THE 42ND INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2016年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved laser assisted device alteration (TR-LADA) has interesting applications to reduce the spatial spread of LADA site, as well as benefit device design debug. This paper describes an implementation using a 1063nm wavelength nanosecond pulse-on-demand laser diode to obtain a timing resolution of 1-2 tester cycles and spatial resolution enhancements to LADA sites. We also present potential capabilities of TR-LADA in the debug of analog circuitry.

引用

页码：527 / 532

页数：6

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