Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

被引：0
|
作者：
Zhang, Dongli [1 ,2 ]
Wang, Mingxiang [1 ]
Wong, Man [2 ]
Kwok, Hoi-Sing [2 ]
机构：
[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China
来源：
CHINESE PHYSICS B | 2017年 / 26卷 / 01期
基金：
中国国家自然科学基金;
关键词：
metal-induced crystallization; poly-Si; nickel; diffusion coefficient; THIN-FILM-TRANSISTOR; GRAIN SILICON; PERFORMANCE; SI; GROWTH;
D O I：
10.1088/1674-1056/26/1/016601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84 x 10(-9) cm(2)/s at 550 degrees C is estimated for the trace nickel diffusion in a-Si.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Polycrystalline silicon thin films obtained by metal-induced crystallization
    Dimova-Malinovska, D
    Angelov, O
    Kamenova, M
    Sendova-Vassileva, M
    Vaseashta, A
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 747 - 748
  • [42] Polycrystalline silicon thin films obtained by metal-induced crystallization
    D. Dimova-Malinovska
    O. Angelov
    M. Kamenova
    M. Sendova-Vassileva
    A. Vaseashta
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 747 - 748
  • [43] The effect of nickel seed position on Nickel-Induced-Lateral-Crystallization of amorphous silicon
    Cheng, CF
    Leung, TC
    Poon, MC
    PROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING, 2001, : 97 - 100
  • [44] Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication
    Jeong, Hyejeong
    Lee, Jong -Ho
    Boo, Seongjae
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2010, 20 (06): : 254 - 261
  • [45] Structural properties of nickel-metal-induced laterally crystallized silicon films
    Miyasaka, M
    Makihira, K
    Asano, T
    Pecz, A
    Stoemenos, J
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 213 - 218
  • [46] The effects of high temperature annealing on metal-induced laterally crystallized polycrystalline silicon
    Wang, MX
    Meng, ZG
    Wong, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) : 2061 - 2067
  • [47] Gold induced crystallization of amorphous silicon
    Andrade, K
    Jang, J
    Moon, BY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S376 - S381
  • [48] ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
    I. Gordon
    P. Schattschneider
    O. Van Der Biest
    ActaMetallurgicaSinica(EnglishLetters), 2007, (03) : 167 - 170
  • [49] Pressure induced crystallization in amorphous silicon
    Pandey, K. K.
    Garg, Nandini
    Shanavas, K. V.
    Sharma, Surinder M.
    Sikka, S. K.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (11)
  • [50] RELATIONSHIP OF ALUMINUM GRAIN SIZE TO THE GRAIN SIZE OF POLYCRYSTALLINE SILICON PRODUCED BY THE ALUMINUM INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
    Stinzianni, Emilio
    Dunn, Kathleen
    Zhao Zhouying
    Rane-Fondacaro, Manisha
    Efstathiadis, Harry
    Haldar, Pradeep
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1057 - 1062
12345