Polycrystalline silicon thin films obtained by metal-induced crystallization

被引：0
|
作者：
D. Dimova-Malinovska
O. Angelov
M. Kamenova
M. Sendova-Vassileva
A. Vaseashta
机构：
[1] Bulgarian Academy of Sciences,Central Laboratory for Solar Energy and New Energy Sources
[2] Marshall University,Department of Physics
来源：
Journal of Materials Science: Materials in Electronics | 2003年 / 14卷
关键词：
Spectroscopy; Electron Microscopy; Scanning Electron Microscopy; Crystallization; Thin Film;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The formation of high-quality polycrystalline silicon (poly-Si) on different substrates has important applications in the development of thin-film transistors, solar cells, image sensors, etc. In this study, we present the results of an investigation of poly-Si films on glass, formed by aluminum-induced crystallization. The process is based on the isothermal annealing for 3 h at 500 °C of co-sputtered Al+Si or sputtered a-Si films on glass, with and without thermally evaporated Al. The poly-Si films were investigated by Raman spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy.
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页码：747 / 748
页数：1
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