Strain effect on the band structure of InAs/GaAs quantum dots

被引：6

作者：

Zhu, HJ ^{[1
]}

Feng, SL ^{[1
]}

Jiang, DS ^{[1
]}

Deng, YM ^{[1
]}

Wang, HL ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 11期

关键词：

InAs/GaAs; quantum dots; photoluminescence; band structure; relaxation;

D O I：

10.1143/JJAP.38.6264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 mu m thick InGaAs cap layer was added onto the InAs quantum dot layer to modify the strain in the quantum dots. The exciton energies of InAs quantum dots before and after the relaxation of the cap layer were determined by photoluminescence. When the epilayer was lifted off from the substrate by etching away the sacrifice layer (AlAs) by HF solution, the energy of exciton in the quantum dots decreases due to band gap narrowing resulted from the strain relaxation. This method can be used to obtain much longer emission wavelength from InAs quantum dots.

引用

页码：6264 / 6265

页数：2

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