Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters

被引：13
|
作者：
Le Ru, EC [1 ]
Howe, P [1 ]
Jones, TS [1 ]
Murray, R [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Dev, London SW7 2BZ, England
来源：
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS | 2003年
关键词：
D O I：
10.1002/pssc.200303051
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We show that it is possible to obtain emission up to 1.5 mum from InAs/GaAs quantum dots using a combination of low growth rates, a seed layer, variable substrate temperature, and InGaAs capping. These strain engineered structures exhibit a remarkably small linewidth (14 meV) consistent with islands that are very uniform in both composition and size.
引用
收藏
页码：1221 / 1224
页数：4
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