Strain effect on the band structure of InAs/GaAs quantum dots

被引：6

作者：

Zhu, HJ ^{[1
]}

Feng, SL ^{[1
]}

Jiang, DS ^{[1
]}

Deng, YM ^{[1
]}

Wang, HL ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 11期

关键词：

InAs/GaAs; quantum dots; photoluminescence; band structure; relaxation;

D O I：

10.1143/JJAP.38.6264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 mu m thick InGaAs cap layer was added onto the InAs quantum dot layer to modify the strain in the quantum dots. The exciton energies of InAs quantum dots before and after the relaxation of the cap layer were determined by photoluminescence. When the epilayer was lifted off from the substrate by etching away the sacrifice layer (AlAs) by HF solution, the energy of exciton in the quantum dots decreases due to band gap narrowing resulted from the strain relaxation. This method can be used to obtain much longer emission wavelength from InAs quantum dots.

引用

页码：6264 / 6265

页数：2

共 50 条

[1] Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion
Kim, JS
Kim, EK
Park, K
Yoon, E
[J]. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 433 - 438
[2] Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes
Olvera-Enriquez, J. P.
Espinosa-Vega, L. I.
Cortes-Mestizo, I. E.
Mercado-Ornelas, C. A.
Perea-Parrales, F. E.
Belio-Manzano, A.
Yee-Rendon, C. M.
Mendez-Garcia, V. H.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (04):
[3] Effect of the stacking period on the strain field in InAs/GaAs quantum dots
Shin, H
Lee, W
Yoo, YH
[J]. NANOTECHNOLOGY, 2003, 14 (07) : 742 - 747
[4] Strain distribution and band structure of InAs/GaAs quantum ring superlattice
Mughnetsyan, Vram
Kirakosyan, Albert
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 318 - 327
[5] Control of Strain in GaSbAs/InAs/GaAs Quantum Dots
Haxha, V.
Drouzas, I.
Ulloa, J. M.
Bozkurt, M.
Koenraad, P. M.
Mowbray, D. J.
Liu, H. Y.
Steer, M. J.
Hopkinson, M.
Migliorato, M. A.
[J]. QUANTUM DOTS 2010, 2010, 245
[6] Atomic structure of InAs quantum dots on GaAs
Jacobi, K
[J]. PROGRESS IN SURFACE SCIENCE, 2003, 71 (5-8) : 185 - 215
[7] STRAIN DISTRIBUTION AND ELECTRONIC STRUCTURE OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS
Liu, Yumin
Xu, Zihuan
Yu, Zhongyuan
Jia, Boyong
Lu, Wenjuan
Lu, Pengfei
Han, Lihong
[J]. JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2009, 18 (04) : 553 - 560
[8] InAs quantum dots on GaAs for intermediate band solar cells
Micha, Daniel N.
Weiner, Eleonora
Jakomin, Roberto
Kawabata, Rudy
Mourao, Renato
Pires, Mauricio P.
Souza, Patricia L.
[J]. 2015 30TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2015,
[9] Strain distribution and electronic structure of InAs quantum dots on GaAs: Atomic scale calculations
Saito, T
Schulman, JN
Arakawa, Y
[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 12 : 19 - 25
[10] Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots
宋鑫
冯淏
刘玉敏
俞重远
刘建涛
[J]. Chinese Physics B, 2013, 22 (01) : 499 - 503

← 1 2 3 4 5 →