Gallium nitride nanowires doped with magnesium

被引：2

作者：

Zhang, Dongdong ^{[1
]}

Xue, Chengshan ^{[1
]}

Zhuang, Huizhao ^{[1
]}

Sun, Haibo ^{[1
]}

Cao, Yuping ^{[1
]}

Huang, Yinglong ^{[1
]}

Wang, Zouping ^{[1
]}

Wang, Ying ^{[1
]}

Guo, Yongfu ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Crystal growth; Nanomaterials; Nanowires; Mg-doped; GAN NANOWIRES; ZNO NANOWIRES; GA2O3; FILMS; PHOTOLUMINESCENCE; FABRICATION;

D O I：

10.1016/j.matlet.2009.01.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD). scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：978 / 981

页数：4

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