Non-destructive Evaluations of Gallium Nitride Nanowires

被引：9
|
作者：
Verma, S. K. [1 ]
Yadav, R. R. [1 ]
Yadav, A. K. [2 ]
Joshi, Bipin [3 ]
机构：
[1] Univ Allahabad, Dept Phys, Allahabad 211002, Uttar Pradesh, India
[2] SP Mem Inst Technol, Dept Phys, Allahabad, Uttar Pradesh, India
[3] Dept Sci & Technol, SERC Div, New Delhi, India
来源：
MATERIALS LETTERS | 2010年 / 64卷 / 15期
关键词：
Elastic properties; Nanomaterial; Ultrasonic attenuation; Defects; PHOTOLUMINESCENCE; FABRICATION; NANORODS;
D O I：
10.1016/j.matlet.2010.04.063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have calculated the second and third order elastic constants of GaN nanowires at room temperature validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the non-linear elastic constants for different diameters (97 nm -160 nm) of the wires at the nanoscale. Where possible, the results are compared with the experiments. Finally we established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1677 / 1680
页数：4
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