Pentacene thin-film transistors with polymeric gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170degreesC, which corresponds to the baking of the polymeric gate dielectric. These devices presented good electrical performances with field-effect mobilities of 0.01 cm(2) V-1 s(-1) and low threshold voltages (-15 V). Atomic force microscopy studies reveal that the microstructure of pentacene layers is strongly conditioned by the surface morphology of the dielectric. (C) 2003 Elsevier B.V. All rights reserved.