Pentacene thin-film transistors with polymeric gate dielectric

被引：119
|
作者：
Puigdollers, J
Voz, C
Orpella, A
Quidant, R
Martín, I
Vetter, M
Alcubilla, R
机构：
[1] Univ Politecn Catalunya, Dept Elect Engn, Barcelona 08034, Spain
[2] Inst Photon Sci, Barcelona 08034, Spain
来源：
ORGANIC ELECTRONICS | 2004年 / 5卷 / 1-3期
关键词：
pentacene; PMMA; thin-film transistors;
D O I：
10.1016/j.orgel.2003.10.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170degreesC, which corresponds to the baking of the polymeric gate dielectric. These devices presented good electrical performances with field-effect mobilities of 0.01 cm(2) V-1 s(-1) and low threshold voltages (-15 V). Atomic force microscopy studies reveal that the microstructure of pentacene layers is strongly conditioned by the surface morphology of the dielectric. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：67 / 71
页数：5
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