Pseudodielectric functions of InGaAs alloy films grown on InP

被引：7
|
作者：
Kim, TJ [1 ]
Ihn, YS
Kim, YD
Kim, SJ
Aspnes, DE
Yao, T
Shim, K
Koo, BH
机构：
[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[2] Kyung Hee Univ, Res Inst Basic Sci, Seoul 130701, South Korea
[3] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] Kyonggi Univ, Dept Phys, Suwon 440760, South Korea
[6] Changwon Natl Univ, Dept Ceram Sci & Engn, Gyeongnam 641773, South Korea
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期
关键词：
D O I：
10.1063/1.1509093
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present room-temperature pseudodielectric function spectra <epsilon> of InxGa1-xAs films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is used to remove overlayers and obtain the best approximation to the bulk dielectric responses epsilon of the films. By line shape fitting, we determined the x dependences of the E-1 and E-1+Delta(1) critical-point energies and that of the Delta(1) bowing parameter. The results are in good agreement with the predictions of a universal tight-binding model. (C) 2002 American Institute of Physics.
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收藏
页码：2367 / 2369
页数：3
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