INTERFACIAL ROUGHNESS AND ALLOY SCATTERING IN THE INGAAS/INALAS/INP SYSTEM GROWN BY ALE AND LAMBE

被引：0
|
作者：
CHRISTOU, A [1 ]
HATZOPOULOS, Z [1 ]
DIMOULAS, A [1 ]
KIRIAKIDIS, G [1 ]
机构：
[1] FDN RES & TECHNOL,HELLAS,HERAKLION,GREECE
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 04期
关键词：
D O I：
10.1016/0749-6036(91)90172-N
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Molecular beam epitaxial growth of InxGa1-xAs and InyAl1-yAs on Inp has been carried out by atomic layer epitaxy (ALE) and laser assisted molecular beam epitaxy (LAMBE). It is shown that these growth techniques have minimized both alloy clustering and interface roughness in the InGaAs/InAlAs system. Splitting of the PLE spectra indicates a roughness of 2-3 monolayers while transport measurements have placed an upper limit to the roughness at 4 monolayers. © 1991.
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页码：467 / 469
页数：3
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