Magnetophotoluminescence investigations of InGaAs/InAlAs multiple quantum wells grown on InP substrates

We report low-temperature (5 K) magnetophotoluminescence investigations of strain-compensated ln(0.56)Ga(0.44)As/ln(0.49)Al(0.51)As multiple quantum wells grown on InP substrates. From the theoretical analysis of the magnetic field dependence of the exciton ground state, the in-plane reduced mass of the exciton is determined to be mu = 0.03m(0), where mo is the bare electron mass. With use of a conduction-band mass of 0.044m(0), the heavy-hole in-plane effective mass is found to be m(hh,rho) = 0.094m(0), which is much larger than 0.05m(0), the calculated m(hh,rho) in In0.56Ga0.44As in the limit of no valence-band mixing. The enhancement of m(hh,rho) can be explained by localization of heavy holes due to alloy disorder, by fluctuations of the quantum-well thicknesses, and by heavy-and light-hole admixture effects.