Optical and structural properties of beta-FeSi2 layers on Si fabricated by triple Fe-56 ion implantations

被引:0
|
作者
Katsumata, H [1 ]
Shen, HL [1 ]
Kobayashi, N [1 ]
Makita, Y [1 ]
Hasegawa, M [1 ]
Shibata, H [1 ]
Kimura, S [1 ]
Obara, A [1 ]
Uekusa, S [1 ]
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:943 / 946
页数:4
相关论文
共 50 条
  • [31] FORMATION OF BETA-FESI2 FROM THE SINTERED EUTECTIC ALLOY FESI-FE2SI5 DOPED WITH COBALT
    KOJIMA, T
    MASUMOTO, K
    OKAMOTO, MA
    NISHIDA, I
    JOURNAL OF THE LESS-COMMON METALS, 1990, 159 (1-2): : 299 - 305
  • [32] Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis
    Kobayashi, N., 1600, Elsevier Science S.A., Lausanne, Switzerland (270): : 1 - 2
  • [33] Structural and optical properties of β-FeSi2 layers grown by ion beam mixing
    Bibic, N
    Dhar, S
    Lieb, KP
    Milosavljevic, M
    Schaaf, P
    Huang, YL
    Seibt, M
    Homewood, KP
    McKinty, C
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 198 - 202
  • [34] INSITU AND EXSITU STRUCTURAL CHARACTERIZATION OF BETA-FESI2 FILMS EPITAXIALLY GROWN ON SI(111)
    LAGOMARSINO, S
    SCARINCI, F
    SAVELLI, G
    GIANNINI, C
    CASTRUCCI, P
    GRIMALDI, MG
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1224 - 1228
  • [35] Density functional theory studies of the optical properties of a beta-FeSi2 (100)/Si (001) interface at high pressure
    Li Haitao
    Qian Jun
    Han Fangfang
    Li Tinghui
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
  • [36] SYNTHESIS OF BETA-FESI2 AND ALPHA-FESI2 PHASES BY FE ION-IMPLANTATION INTO SI USING METAL VAPOR VACUUM-ARC ION-SOURCE
    LIU, BX
    ZHU, DH
    LU, HB
    PAN, F
    TAO, K
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) : 3847 - 3854
  • [37] ELECTRICAL AND OPTICAL-PROPERTIES OF BETA-FESI2 AFTER CO IMPLANTATION AND ANNEALING
    PANKNIN, D
    EICHORN, F
    WIESER, E
    SKORUPA, W
    HENRION, W
    ALBRECHT, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02): : 172 - 175
  • [38] Structural properties of beta-FeSi2 bulk crystal grown by horizontal gradient freeze method
    Kakemoto, H
    Tsai, Y
    Beye, AC
    Katsumata, H
    Sakuragi, S
    Makita, Y
    Obara, A
    Kobayashi, N
    Shibata, H
    Uekusa, S
    Tsukamoto, T
    Tsunoda, T
    Imai, Y
    SILICIDE THIN FILMS - FABRICATION, PROPERTIES, AND APPLICATIONS, 1996, 402 : 331 - 336
  • [39] BAND DISCONTINUITIES AT BETA-FESI2/SI HETEROJUNCTIONS AS DEDUCED FROM THEIR PHOTOELECTRIC AND ELECTRICAL-PROPERTIES
    MURET, P
    LEFKI, K
    NGUYEN, TTA
    COLA, A
    ALI, I
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (07) : 1395 - 1403
  • [40] GROWTH OF EPITAXIAL BETA-FESI2 ON (100)SILICON USING FE-TI-SI DIFFUSION COUPLES
    LARSEN, KK
    TAVARES, J
    BENDER, H
    DONATON, RA
    LAUWERS, A
    MAEX, K
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (01) : 599 - 601