A 5 W AlGaN/GaN Power Amplifier MMIC for 25-27 GHz Downlink Applications

被引：0
|
作者：
Samis, S. [1 ]
Friesicke, C. [2 ]
Feuerschuetz, P. [1 ]
Lozar, R. [2 ]
Maier, T. [2 ]
Brueckner, P. [2 ]
Quay, R. [2 ]
Jacob, A. F. [1 ]
机构：
[1] Tech Univ Hamburg, Inst Hochfrequenztech, Denickestr 22, D-21073 Hamburg, Germany
[2] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany
来源：
2018 11TH GERMAN MICROWAVE CONFERENCE (GEMIC 2018) | 2018年
关键词：
Data downlink; Gallium nitride; high power amplifier; K-band; Ka-band; LEO; MMICs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents the design and analysis of a 5 W power amplifier (PA) MMIC operating between 25 and 27 GHz. The technology used is the 0.1 mu m AlGaN/GaN HEMT process of Fraunhofer IAF. To benchmark its performance around 26 GHz two preliminary designs are synthesized and analyzed. The measured results demonstrate for the final MMIC up to 5.2 W of output power associated with 32 % of power added efficiency (PAE). A peak PAE of 35 % was observed in continuous-wave (CW) operation at a drain supply voltage of 15 V.
引用
收藏
页码：9 / 12
页数：4
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